SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC857AWHE3-TP is a PNP general-purpose transistor manufactured by Micro Commercial Components (MCC). It operates within a collector current of -100 mA and power dissipation of 150 mW. The device features a collector-base voltage of -50 V, collector-emitter voltage of -45 V, and emitter-base voltage of -5 V. Electrical characteristics include a transition frequency of 100 MHz and DC current gain ranging from 125 to 250. It is housed in an SOT-323 package with an operating junction temperature range of -65°C to +150°C.
Verify the specific suffix HE3-TP against official MCC documentation to confirm RoHS compliance and halogen-free status. Ensure procurement channels are authorized distributors to guarantee traceability and adherence to quality standards. Confirm that the SOT-323 packaging matches the required reel specifications for automated assembly processes.
Select this component when a PNP transistor with -50 V collector-base breakdown is required. The BC857AWHE3-TP offers a DC current gain range of 125 to 250 suitable for moderate amplification needs. Consider the -65°C to +150°C operating temperature range for environments requiring extended thermal stability compared to standard commercial grade devices.
This part belongs to the BC856AWHE3 through BC858CWHE3 series of PNP transistors. The 'BC857' designation indicates specific voltage ratings distinct from the BC856 and BC858 variants. The 'A' suffix denotes the specific DC current gain binning category defined in the manufacturer's electrical characteristics table.
BC857BWHE3-TP
The marking code for the BC857AWHE3-TP is 3E.
The maximum collector-base voltage (V_CBO) is -50 V.
It has a transition frequency (f_T) of 100 MHz, making it suitable for audio frequency and low-frequency RF applications.