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The Diotec Semiconductor BC857B is a surface-mount general-purpose PNP bipolar junction transistor housed in SOT-23 and TO-236 packages. It features a maximum collector current of -100 mA, a collector-emitter voltage (VCEO) of -45 V, and a collector-base voltage (VCBO) of -50 V. The device dissipates up to 300 mW with a junction temperature range of -55°C to +150°C. DC current gain (hFE) for the B group ranges from 150 to 475 at IC = 2 mA. Transition frequency is 100 MHz, and thermal resistance varies by grade.
Verify the specific suffix against official documentation to confirm the exact electrical characteristics and reliability grade. Standard versions without suffixes are industrial grade, while -C denotes commercial grade. Automotive-grade variants require explicit -Q or -AQ suffixes. Confirm package type and tape-and-reel specifications prior to ordering.
Select the BC857B when a low-voltage PNP transistor with moderate current handling is required. Ensure the selected gain group matches the circuit's amplification requirements. Verify that the operating temperature range aligns with the specified -55°C to +150°C limit. Consider complementary NPN transistors if matched pairs are needed for differential configurations.
This component belongs to the BC856...BC860 series of SMD universal PNP transistors manufactured by Diotec Semiconductor AG. The series includes various voltage ratings and gain groups designed for standard commercial and industrial applications. The BC857B specifically targets applications requiring a 45 V collector-emitter breakdown voltage.
Check datasheets for equivalent parts offering identical pinouts and matching voltage/current ratings. Verify that replacement components meet the same thermal resistance and gain group specifications to ensure circuit compatibility.