SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Diotec Semiconductor BC857B-C is a small-signal PNP bipolar junction transistor housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -45 V, a collector-base voltage of -50 V, and a continuous collector current of -100 mA with a peak rating of -200 mA. The device dissipates up to 300 mW at 25°C ambient temperature. As the 'C' suffix indicates, this component belongs to the commercial grade category, offering a DC current gain (hFE) range of 420 to 800 at IC = 2 mA. It operates within a junction temperature range of -55°C to +150°C.
Verify that the ordering code includes the '-C' suffix to confirm the commercial grade specification. Ensure the procurement documentation references the correct datasheet version dated June 18, 2026. Confirm compliance requirements such as RoHS and REACH status directly from the manufacturer's official declarations before finalizing orders.
Select this component when a standard commercial-grade PNP transistor is required for low-power signal processing or switching tasks. The BC857B-C variant provides high current gain suitable for sensitive amplification needs. Consider the thermal resistance characteristics and operating temperature limits when designing for environments exceeding standard room temperatures.
This transistor belongs to the BC856 through BC860 series of universal PNP transistors manufactured by Diotec Semiconductor. These devices are designed as complementary pairs to NPN transistors like the BC846 series. The specific BC857 model offers a collector-emitter voltage of -45 V, distinguishing it from higher-voltage variants within the same family.
Compatible substitutes include other manufacturers' BC857B models in SOT-23 packages. Verify pinout compatibility and electrical parameters such as hFE grouping and saturation voltages against the original specifications.