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The BC857BE6433HTMA1 is a single PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and designed for general-purpose amplification and switching applications. The device features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. With a DC current gain ranging from 200 to 450, it offers high amplification capabilities. The component operates within a temperature range of -65°C to +150°C and has a power dissipation capacity of 330 mW.
Verify the specific suffix BE6433HTMA1 against official Infineon documentation to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure the procurement channel provides valid traceability records. Confirm that the component matches the exact manufacturer part number to avoid substitution errors with similar BC857 variants.
Select this component when a PNP transistor with moderate current handling and high gain is required in a compact SOT-23 footprint. Consider the 45 V breakdown voltage and 100 mA current limit relative to circuit demands. Evaluate thermal management requirements given the 330 mW power dissipation constraint in small packages.
This part belongs to the BC857 series of PNP transistors, widely used in consumer electronics and industrial control systems. The BC857 family provides standardized pinouts and electrical characteristics for easy integration into existing designs. Infineon's manufacturing ensures consistent quality across the series for reliable mass production.
Consult official Infineon cross-reference lists for verified substitutes. Generic equivalents may differ in hFE binning or thermal resistance. Verify pin compatibility and electrical limits before substituting.