BC857BFA-7B

Overview

The BC857BFA-7B is a PNP small signal transistor from Diodes Incorporated, housed in an X2-DFN0806-3 package. It features a collector-emitter breakdown voltage (BVCEO) of -45V and supports a continuous collector current (IC) of -100mA with peak pulse current up to -200mA. Power dissipation reaches 435mW at +25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 470 at specific test conditions, and a current gain-bandwidth product (fT) of up to 340MHz. ESD protection meets JEDEC Class 3A for Human Body Model testing.

Feature Summary

• Compact X2-DFN0806-3 package offers a significantly reduced footprint compared to traditional SOT23 packages while maintaining low off-board profile.
• Qualified to AEC-Q101 standards, ensuring high reliability suitable for automotive and demanding electronic applications.
• Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.

Applications

• General purpose switching and amplification in consumer electronics
• Automotive electronic circuits requiring AEC-Q101 qualified components
• Signal processing stages in compact portable devices

Procurement Notes

Verify the complete part number BC857BFA-7B against official Diodes Incorporated documentation to ensure correct B-grade hFE binning and packaging specifications. Confirm that the X2-DFN0806-3 package dimensions align with your PCB layout constraints. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling. Check for any recent revisions to the datasheet DS36019 Rev. 2 to confirm current electrical limits and thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component when space constraints necessitate a smaller surface-mount package than SOT23 while requiring similar electrical performance. Consider the -45V BVCEO rating for low-voltage switching applications. Evaluate the thermal resistance values if operating near maximum power dissipation limits. Ensure the required current gain bin matches the circuit design needs, as the B suffix indicates specific hFE ranges. Verify compatibility with the suggested pad layout provided in the datasheet for optimal thermal and electrical performance.

Part Context

This device belongs to the BC857 family of PNP transistors, specifically the B-grade variant offering defined current gain ranges. It is complemented by the NPN type BC847BFA for push-pull configurations. The FA suffix denotes the specific tape and reel packaging format. The BC857 series is designed for general-purpose use where small size and reliable switching are prioritized over high-power handling capabilities.

Replacement Considerations

Direct pin-compatible replacements may include other PNP transistors in DFN0806 packages with matching BVCEO and IC ratings. Verify electrical parameters such as hFE bins and saturation voltages carefully. No specific substitute part numbers are confirmed in the provided source material; consult manufacturer cross-reference guides for validated alternatives.

FAQ

What is the maximum collector-emitter breakdown voltage for the BC857BFA?

The maximum collector-emitter breakdown voltage (BVCEO) is -45V, measured with the base open and a collector current of -1mA.

Is the BC857BFA-7B suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive electronic applications.

What is the package type and footprint of the BC857BFA?

The BC857BFA uses an X2-DFN0806-3 package with a footprint area of 0.48mm², which is significantly smaller than standard SOT23 packages.