BC857BFZ-7B

Overview

The BC857BFZ-7B is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an X2-DFN0606-3 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -100 mA. The device offers a power dissipation rating of 925 mW when mounted on a 25mm x 25mm 2oz copper heatsink, with a junction-to-ambient thermal resistance of 135 °C/W under these conditions. Electrical characteristics include a DC current gain (hFE) ranging from 200 to 470 at IC = -2.0mA, and a transition frequency (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Utilizes an X2-DFN0606-3 package footprint that is 40% smaller than the standard DFN1006 configuration.
• Provides high collector current capability of -100 mA for general-purpose switching applications.
• Features a low profile height of 0.4 mm to minimize off-board component space requirements.
• Complements the NPN type BC847BFZ for matched pair circuit designs.

Applications

• Space-constrained consumer electronics
• General-purpose switching circuits
• Signal amplification stages

Procurement Notes

Verify the specific ordering suffix '-7B' against the manufacturer's official documentation to confirm reel size and tape width specifications. Ensure the procurement channel is authorized to maintain product integrity and traceability. Confirm compliance with RoHS and halogen-free requirements as defined in the datasheet notes before finalizing orders.

Selection Notes

Select this component when board real estate is limited due to its compact X2-DFN0606-3 footprint. Consider the thermal management requirements carefully, as the 925 mW power dissipation rating depends on mounting the exposed collector pad to a substantial copper area. Verify that the required hFE range fits within the 200 to 470 specification for the intended application load.

Part Context

This part belongs to the BC857 series of PNP transistors produced by Diodes Incorporated. It serves as the complementary counterpart to the BC847BFZ NPN transistor. The device is designed for modern electronic systems requiring reduced physical dimensions while maintaining robust electrical performance standards typical of small-signal bipolar junction transistors.

Replacement Considerations

The BC857BFZ is functionally complementary to the BC847BFZ. For direct pin-compatible replacements, verify datasheets for other manufacturers offering X2-DFN0606-3 packaged PNP transistors with matching -45 V VCEO and -100 mA IC ratings.

FAQ

What is the maximum power dissipation rating?

The power dissipation is 270 mW on minimum recommended pads, or 925 mW when the exposed collector pad is mounted on a 25mm x 25mm 2oz copper heatsink.

Does the device support high-voltage operation?

Yes, it supports a collector-base voltage (VCBO) of -50 V and a collector-emitter voltage (VCEO) of -45 V.

Is the BC857BFZ suitable for life support applications?

No, Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without express written approval.