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The onsemi BC857BLT1G is a PNP silicon general-purpose transistor housed in the SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a DC current gain ranging from 220 to 475 at an IC of -2.0 mA and VCE of -5.0 V, with a transition frequency of 100 MHz. Thermal dissipation is rated at 225 mW on an FR-5 board, operating within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'LT1' corresponds to the 3,000-unit tape and reel configuration. Confirm that the device code marking matches '3F' as specified in the manufacturer's documentation. Ensure compliance with automotive site requirements if AEC-Q101 qualification is necessary for the application.
Select this component for applications requiring a PNP transistor with a -45 V breakdown voltage and moderate current handling capabilities. The SOT-23 package is suitable for space-constrained PCB layouts. Consider the hFE binning options when designing bias networks to ensure consistent gain across production batches.
This part belongs to the BC856ALT1G series datasheet family, which groups multiple voltage variants including BC856, BC857, BC858, and BC859. The BC857 variant specifically provides a -45 V rating, distinguishing it from the higher voltage BC856 (-65 V) and lower voltage BC858 (-30 V) counterparts within the same manufacturing line.
BC857BLT3G
The device uses Style 6 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
Yes, devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable. Standard versions may not carry this specific qualification unless explicitly stated.
The collector-base breakdown voltage (V(BR)CBO) is -50 V for the BC857 series.