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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi BC857BLT1G is a PNP silicon general-purpose transistor housed in an SOT-23 (TO-236) surface-mount package. It features a maximum collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a DC current gain range of 220 to 475 at -2.0 mA, with a transition frequency of 100 MHz. It operates within a junction temperature range of -55°C to +150°C and is compliant with RoHS standards.
Feature Summary
- AEC-Q101 qualified for automotive applications requiring unique site and control change requirements
- Lead-free, halogen-free, and bromine-free construction
- Designed for low power surface mount applications
Applications
- General purpose amplifier circuits
- Automotive electronic systems
- Low power switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive use. Confirm compliance with Pb-Free and RoHS directives prior to integration into final assemblies.
Selection Notes
Select this component for designs requiring a PNP transistor with moderate current handling capabilities in a compact surface-mount footprint. Consider the specified DC current gain range and saturation voltages when designing bias networks. Evaluate thermal resistance characteristics relative to the expected ambient operating conditions.
Part Context
This part belongs to the BC856ALT1G series datasheet family, which includes various gain grades and voltage ratings. The BC857 variant specifically provides a -45 V collector-emitter breakdown voltage, distinguishing it from the higher voltage BC856 and lower voltage BC858 models within the same package lineup.
Replacement Considerations
BC857ALT1G
FAQ
What is the marking code for the BC857BLT1G?
The device marking code is 3F.
Is the BC857BLT1G suitable for automotive applications?
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
What is the typical noise figure for this transistor?
The typical noise figure is 4.0 dB under standard test conditions.
