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The BC857BQ-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated in an SOT23 package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device has a power dissipation rating of 310 mW at +25°C and operates within a temperature range of -65°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 220 to 475, a transition frequency (fT) of 100 MHz, and a collector-base breakdown voltage of -50 V.
Verify the ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets the specific automotive quality standards if intended for such use. Ensure the manufacturer's datasheet revision aligns with design specifications before finalizing procurement orders.
Select this component when a PNP small-signal transistor with high DC current gain is required. Consider its suitability for automated assembly lines due to the SOT23 package format. Evaluate thermal performance against the specified junction-to-ambient resistance for the target application environment.
This part belongs to the BC856AQ–BC857BQ family of PNP small-signal transistors. It serves as a complementary counterpart to the NPN BC846–BC848 series. The device is designed for general-purpose switching and amplification tasks in consumer and industrial electronics.
Check for direct equivalents within the BC857 series from other manufacturers. Verify pinout compatibility and electrical parameter overlaps before substituting.