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The BC857BT-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT-523 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a maximum DC collector current of -100 mA. The device utilizes epitaxial planar die construction and offers a gain-bandwidth product (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C with a power dissipation of 150 mW. The 'BT' suffix indicates a specific DC current gain (hFE) binning range of 220 to 475 at -2 mA and -5 V.
Verify the ordering suffix matches the required hFE binning specifications for your circuit design. Confirm that the SOT-523 package dimensions align with your PCB footprint layout. Ensure compliance with RoHS directives if operating in regulated regions. Check the datasheet for absolute maximum ratings to prevent thermal overstress during operation.
Select this component when a compact PNP transistor with moderate current handling is required. The BT variant provides higher current gain compared to the AT version, suitable for low-current amplification. Consider the SOT-523 package size constraints and thermal dissipation capabilities relative to your application's ambient temperature conditions.
This part belongs to the BC857AT, BT, CT series of PNP transistors. It serves as the complementary counterpart to the BC847BT NPN transistor. The series is designed for general-purpose small signal applications where space efficiency and reliability are prioritized. The BC857BT specifically targets applications requiring higher DC current gain within the same physical footprint.
BC857AT-7-F: Lower hFE range (125-290). BC857CT-7-F: Higher hFE range (420-800). BC847BT-7-F: Complementary NPN type.