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The BC857BU3HZGT106 is a PNP general-purpose small-signal transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an SOT-323 (UMT3) surface-mount package. The device features a maximum collector-emitter voltage of -45 V and a continuous collector current of -0.1 A. Power dissipation is rated at 0.2 W, with a DC current gain (hFE) ranging from 210 to 480. It complies with the AEC-Q101 automotive grade standard and operates within a storage temperature range of -55°C to +150°C.
Verify the specific suffix U3HZGT106 against official ROHM documentation to confirm packaging details and reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive designs. Cross-reference the datasheet for exact hFE binning and thermal characteristics relevant to your specific operating conditions.
Select this component when a PNP transistor with a -45V rating and -0.1A current capacity is required in an SOT-323 package. It serves as the direct complement to the BC847BU3HZG. Consider its AEC-Q101 qualification for automotive environments where standard commercial grade parts may not suffice for long-term reliability.
This part belongs to the BC857BU3HZG series of PNP transistors from ROHM Semiconductor. These devices are specifically engineered for automotive applications, adhering to strict AEC-Q101 quality standards. The series includes complementary NPN types like the BC847BU3HZG, facilitating balanced design pairs for differential or push-pull configurations in compact surface-mount layouts.
Official complementary counterpart: BC847BU3HZGT106.