BC857BW

Overview

The BC857BW is a PNP bipolar junction transistor (BJT) manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a collector-emitter breakdown voltage of -30V and a maximum continuous collector current of 100mA. The device is housed in an SOT-23 surface-mount package with a maximum power dissipation of 250mW. DC current gain (hFE) is specified at a minimum of 420 when tested at Ic = 2mA and Vce = -5V. The transition frequency is rated at 100MHz, and the operating junction temperature reaches up to 150°C.

Feature Summary

• High DC current gain for efficient signal amplification
• Compact SOT-23 surface-mount packaging for space-constrained designs
• Fast switching capability suitable for high-frequency applications

Applications

• General-purpose signal amplification circuits
• Switching applications in low-power digital logic interfaces
• Audio pre-amplifier stages

Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. against official datasheets. Confirm the specific suffix 'BW' corresponds to the intended binning or tape-and-reel configuration. Ensure compatibility with standard SOT-23 footprints during PCB layout review.

Selection Notes

Select this component for designs requiring high current gain in a small form factor. Verify that the -30V rating meets circuit voltage requirements. Consider the 100mA limit for load handling. Compare hFE bins if precise gain consistency is critical for the application.

Part Context

This part belongs to the discrete semiconductor category, specifically within single NPN/PNP bipolar junction transistors. It serves as a fundamental active component for analog and digital switching tasks in consumer electronics and industrial control systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.