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The BC857BW,135 is a PNP general-purpose transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current of 100 mA with a power dissipation rating of 200 mW. It features a transition frequency (fT) of 100 MHz and a minimum DC current gain (hFE) of 200 at 2 mA and 5 V. Operating temperatures range from -65 °C to +150 °C.
Verify the specific suffix '135' corresponds to the reel packaging format required for your assembly line. Confirm that the SOT-323 footprint matches your design's land pattern dimensions. Ensure the component meets RoHS compliance standards if mandated by your regional regulations. Cross-reference the manufacturer part number against official Nexperia documentation to avoid counterfeit risks.
Select this component when a small form factor PNP transistor is required for low-voltage logic interfacing. The 45 V rating provides sufficient headroom for standard 5 V and 3.3 V systems. Consider the 200 mW thermal limit during high-duty cycle operations. Compare hFE ranges against circuit requirements to ensure adequate drive capability without excessive base current.
This part belongs to the Nexperia BC857 series of general-purpose transistors. It serves as the PNP complement to the BC847 series NPN devices. The series offers various gain grades (A, B, C) packaged in SOT-323 or similar small outlines. These components are widely used in digital and analog circuits requiring compact, reliable switching elements.
Official complements within the same family include BC847BW,135 for NPN applications. Other variants like BC857AW,135 or BC857CW,135 offer different gain characteristics but share identical pinouts and packages. Verify electrical parameters match before substitution.