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The BC857C RFG is a PNP bipolar junction transistor manufactured by Taiwan Semiconductor. It utilizes silicon epitaxial die construction and is housed in an SOT-323 surface-mount package. The device supports a maximum collector current of 100 mA and offers a collector-emitter voltage rating of 45 V. It features a DC current gain (hFE) range of 290 to 640 at a collector current of -2 mA. The component operates within a temperature range of -55°C to +150°C and complies with RoHS standards.
Verify the specific suffix RFG against official Taiwan Semiconductor documentation to confirm reel packaging specifications. Ensure compatibility with SOT-323 footprints during schematic capture. Confirm RoHS compliance status through the manufacturer's environmental declarations before integration into regulated assemblies.
Select this component when a PNP transistor with high current gain is required in a compact form factor. The SOT-323 package suits space-constrained designs. Verify that the 45V voltage rating meets circuit requirements. Consider thermal management capabilities given the small package size and power dissipation limits.
This part belongs to the BC857 family of small signal transistors. It serves as the PNP counterpart to the BC847 NPN series. The BC857C variant specifically denotes a tighter binning of current gain characteristics compared to lower grade variants, ensuring consistent performance in precision analog and digital switching applications.
The hFE range is 290 to 640 at a collector current of -2 mA.
Yes, the component is lead-free and RoHS compliant.