ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：45V 100MA 330MW SMD TRANSISTOR-S
- Series：BC857
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：350 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
Download product information
Overview
The BC857C TR TIN/LEAD is a single-element PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 45 V. The device utilizes a plastic ULTRAMINI-3 surface-mount package with tin-lead terminal finishes. Key electrical characteristics include a minimum DC current gain (hFE) of 420, a maximum operating temperature of 150 °C, and compliance with EAR99 export regulations.
Feature Summary
- Single-element PNP configuration for general-purpose switching and amplification
- High DC current gain ensuring effective signal control
- Surface-mount construction in an ultraminiature plastic package
Applications
- General purpose switching circuits
- Amplifier applications
- Driver stages requiring high gain
Procurement Notes
Verify the specific suffix 'TR TIN/LEAD' against the manufacturer's official datasheet to confirm terminal finish composition and reel packaging specifications. Ensure compatibility with RoHS directives if required, as tin-lead finishes may not meet all environmental standards. Confirm the hFE binning corresponds to the C grade requirements for your circuit design.
Selection Notes
Select this component when a high-gain PNP transistor is required in a compact surface-mount form factor. The 45V rating suits low-voltage logic interfaces. Verify that the tin-lead termination meets solderability requirements for the intended assembly process. Consider thermal dissipation limits within the SOT-23 equivalent footprint.
Part Context
This part belongs to the BC857 series of PNP transistors, widely used in consumer electronics and industrial controls. It serves as the complement to the BC847 NPN series. The BC857C variant specifically denotes a higher current gain bin compared to A or B grades, making it suitable for sensitive amplification tasks.
Replacement Considerations
Compatible substitutes include BC857B and BC857A from various manufacturers, provided the hFE range matches application needs. Cross-reference pinouts for SOT-23 packages to ensure direct replacement without PCB modification.
