BC857C

Overview

The BC857C is a PNP general-purpose transistor manufactured by Taiwan Semiconductor Corporation. It is designed for low current and low voltage applications, featuring a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V. The device utilizes a silicon planar epitaxial structure and is housed in the SOT-23 surface-mount plastic package. It serves as the PNP complement to the BC846 and BC847 NPN transistors within the same series.

Feature Summary

• Utilizes a silicon planar epitaxial structure for reliable performance
• Designed for low current switching and amplification tasks
• Housed in an SOT-23 surface-mount plastic package

Applications

• General purpose switching
• Amplifier applications
• Complementary pairing with BC846/BC847 NPN transistors

Procurement Notes

Verify the manufacturer designation on the component marking against official Taiwan Semiconductor Corporation documentation. Confirm that the specific part number matches the required electrical characteristics and package type before integration into designs. Ensure compliance with relevant environmental standards such as RoHS requirements specified in the datasheet.

Selection Notes

Select this component for circuits requiring a compact PNP switch or amplifier with a 100 mA current limit. It is suitable for low-voltage signal processing where space constraints necessitate the SOT-23 footprint. Consider its complementary relationship with BC846/BC847 devices when designing differential pairs or push-pull stages.

Part Context

This component belongs to the BC857 series of PNP general-purpose transistors. It shares the same physical package and basic operational principles as other variants in the family, differentiated primarily by their DC current gain (hFE) ranges. The BC857C specifically targets applications requiring higher gain compared to lower suffix variants.