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The BC857CFSW-7 is a PNP general-purpose bipolar junction transistor manufactured by Diodes Incorporated. It is housed in an SOT-323 surface-mount package and designed for low-current applications with a maximum collector current of 100 mA. The device features a collector-emitter breakdown voltage of 45 V and a collector-base voltage of 50 V, while maintaining an emitter-base voltage rating of 5 V. Power dissipation is rated at 200 mW, supporting operation across a temperature range from -65 °C to +150 °C. The component exhibits a high DC current gain (hFE) ranging from 420 to 800 at specified test conditions, ensuring reliable performance in switching and amplification circuits.
Verify the specific suffix FS against official Diodes Incorporated documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with standard SMT reflow profiles and check for AEC-Q101 qualification if automotive usage is intended. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Select this component when a compact PNP transistor with high current gain is required for low-voltage logic interfacing. Compare hFE ranges against circuit requirements to ensure adequate drive capability. Consider thermal management constraints due to the small package size and limited power dissipation rating compared to larger packages.
This part belongs to the BC857 series of PNP transistors, widely used as complementary devices to NPN types like the BC847. It serves as a standard solution for discrete amplifier and switch designs in consumer electronics and industrial control systems where small form factors are critical.
Compatible substitutes include BC857C variants from other manufacturers such as NXP Semiconductors, provided pinouts and electrical parameters match. Verify package dimensions and lead configurations before substitution.