BC857CFSWQ-7

BC857CFSWQ-7

$0.04
  • Description:TRANS PNP 45V 0.1A UDFN14123/SWP
  • Series:-

SKU:4274e6d96acc Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.1A UDFN14123/SWP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:450 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-UDFN
  • Supplier Device Package:U-DFN1412-3/SWP (Type A)
  • Grade:Automotive
  • Qualification:AEC-Q101

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BC857CFSWQ-7

Overview

The BC857CFSWQ-7 is a PNP general-purpose bipolar junction transistor manufactured by Diodes Incorporated. It is housed in an SOT-323 (SC-70) surface-mount package and complies with the AEC-Q101 automotive qualification standard. The device supports a maximum continuous collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 200 mW, with a transition frequency (fT) of 200 MHz. The unit operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
  • High DC current gain configuration optimized for efficient signal amplification and switching applications.
  • Compact SOT-323 surface-mount footprint designed for space-constrained printed circuit board layouts.

Applications

  • Automotive electronic circuits requiring qualified discrete components
  • General-purpose signal amplification stages
  • Low-power switching logic interfaces

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact binning and packaging specifications. Ensure that the component meets all required environmental and electrical standards for the intended application before finalizing procurement decisions.

Selection Notes

Select this component when an automotive-qualified PNP transistor is required for compact designs. Compare power dissipation limits and current gain bins against alternative packages to ensure compatibility with thermal constraints and circuit requirements.

Part Context

This part belongs to the BC857 series of PNP transistors produced by Diodes Incorporated. The series provides various gain grades and packaging options, including SOT-23 and SOT-323 configurations. The Q suffix typically denotes automotive qualification, distinguishing it from standard commercial grade variants within the same family.

Replacement Considerations

Compatible substitutes include BC857CW-7-F and BC857BTQ-7 from Diodes Incorporated, provided they meet the specific gain and package requirements of the design.

FAQ

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is 45 V.

Is this component suitable for automotive applications?

Yes, the BC857CFSWQ-7 is qualified according to the AEC-Q101 standard.

What is the transition frequency of the device?

The transition frequency (fT) is specified as 200 MHz.

BC857CFSWQ-7BC857CFSWQ-7
$0.04
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