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The BC857CFSWQ-7 is a PNP general-purpose bipolar junction transistor manufactured by Diodes Incorporated. It is housed in an SOT-323 (SC-70) surface-mount package and complies with the AEC-Q101 automotive qualification standard. The device supports a maximum continuous collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 200 mW, with a transition frequency (fT) of 200 MHz. The unit operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm exact binning and packaging specifications. Ensure that the component meets all required environmental and electrical standards for the intended application before finalizing procurement decisions.
Select this component when an automotive-qualified PNP transistor is required for compact designs. Compare power dissipation limits and current gain bins against alternative packages to ensure compatibility with thermal constraints and circuit requirements.
This part belongs to the BC857 series of PNP transistors produced by Diodes Incorporated. The series provides various gain grades and packaging options, including SOT-23 and SOT-323 configurations. The Q suffix typically denotes automotive qualification, distinguishing it from standard commercial grade variants within the same family.
Compatible substitutes include BC857CW-7-F and BC857BTQ-7 from Diodes Incorporated, provided they meet the specific gain and package requirements of the design.
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, the BC857CFSWQ-7 is qualified according to the AEC-Q101 standard.
The transition frequency (fT) is specified as 200 MHz.