SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi BC857CLT1G is a PNP silicon general-purpose transistor housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a DC current gain ranging from 180 to 520 at a collector current of -2.0 mA and a collector-emitter voltage of -5.0 V. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and an operating junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix to confirm package type and shipping quantity. Confirm that the 'G' suffix indicates Pb-free compliance. Ensure the component meets RoHS standards if required by your assembly process. Check for automotive prefix requirements if AEC-Q101 qualification is necessary for your application.
Select this component when a PNP transistor with a -45 V collector-emitter voltage rating is required. Consider the high DC current gain range suitable for amplification tasks. Verify thermal management needs against the specified power dissipation limits on your chosen substrate. Ensure the SOT-23 package fits your PCB layout constraints.
This part belongs to the BC856ALT1G series, which includes complementary NPN transistors like the BC847. The series is designed for general-purpose use in both consumer and automotive electronics. The BC857 variant specifically provides a -45 V rating, distinguishing it from the higher voltage BC856 and lower voltage BC858 variants.
BC857BLT1G
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Yes, devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable. Standard versions may not carry this specific qualification unless specified.
The maximum collector-base breakdown voltage (V(BR)CBO) is -50 V.