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The BC857CLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It is housed in an SOT-23 (TO-236) surface-mount package with three terminals: Base, Emitter, and Collector. The device features a collector-emitter voltage rating of -45 V and a continuous collector current capacity of -100 mA dc. Electrical characteristics include a DC current gain ranging from 150 to 475 at specific test conditions, a collector-emitter saturation voltage of -0.65 V max, and a transition frequency of 100 MHz. Thermal resistance from junction to ambient is 556 °C/W on an FR-5 board.
Verify that the ordering suffix matches the required tape and reel quantity and packaging specifications. Confirm the presence of the Pb-Free indicator or microdot marking as documented in the datasheet. Ensure the component source aligns with the specified manufacturing site requirements if automotive qualification is necessary.
Select this component when a PNP transistor with a -45 V collector-emitter voltage rating is required. The BC857 variant offers a specific DC current gain range distinct from the BC856 and BC858 series members. Consider the SOT-23 package dimensions and thermal dissipation limits relative to the application's power requirements.
This part belongs to the BC856ALT1G series, which includes complementary NPN devices and other PNP variants with different voltage ratings. The series utilizes a standardized SOT-23 case outline (CASE 318). The 'CL' designation indicates the specific DC current gain binning for the BC857 model within this product family.
Direct substitutes within the same series include BC857ALT1G and BC857BLT1G, which share the same package but differ in gain binning. Complementary NPN replacements are available within the BC848 series.