BC857CLT1G

BC857CLT1G

$0.09
  • Description:TRANS PNP 45V 0.1A SOT23-3
  • Series:-

SKU:e59e192f1cab Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC857CLT1G

Overview

The BC857CLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, manufactured by onsemi. It is housed in an SOT-23 (TO-236) surface-mount package with three terminals: Base, Emitter, and Collector. The device features a collector-emitter voltage rating of -45 V and a continuous collector current capacity of -100 mA dc. Electrical characteristics include a DC current gain ranging from 150 to 475 at specific test conditions, a collector-emitter saturation voltage of -0.65 V max, and a transition frequency of 100 MHz. Thermal resistance from junction to ambient is 556 °C/W on an FR-5 board.

Feature Summary

  • PNP epitaxial silicon planar design optimized for switching and audio frequency amplifier applications
  • AEC-Q101 qualified and PPAP capable for automotive and high-reliability requirements
  • Lead-free, halogen-free, and bromine-free construction compliant with RoHS directives

Applications

  • General purpose amplification circuits
  • Electronic switching applications
  • Audio frequency (AF) amplifier stages

Procurement Notes

Verify that the ordering suffix matches the required tape and reel quantity and packaging specifications. Confirm the presence of the Pb-Free indicator or microdot marking as documented in the datasheet. Ensure the component source aligns with the specified manufacturing site requirements if automotive qualification is necessary.

Selection Notes

Select this component when a PNP transistor with a -45 V collector-emitter voltage rating is required. The BC857 variant offers a specific DC current gain range distinct from the BC856 and BC858 series members. Consider the SOT-23 package dimensions and thermal dissipation limits relative to the application's power requirements.

Part Context

This part belongs to the BC856ALT1G series, which includes complementary NPN devices and other PNP variants with different voltage ratings. The series utilizes a standardized SOT-23 case outline (CASE 318). The 'CL' designation indicates the specific DC current gain binning for the BC857 model within this product family.

Replacement Considerations

Direct substitutes within the same series include BC857ALT1G and BC857BLT1G, which share the same package but differ in gain binning. Complementary NPN replacements are available within the BC848 series.

BC857CLT1GBC857CLT1G
$0.09
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