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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC857CLT3G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage rating of -45 V and a continuous collector current capacity of -100 mA. The device offers a minimum DC current gain (hFE) of 420 at a collector current of -2.0 mA and -5.0 V. Electrical characteristics include a base-emitter saturation voltage of -0.9 V at -100 mA and a transition frequency of 100 MHz.
Feature Summary
- PNP epitaxial silicon planar design optimized for general-purpose switching and amplifier applications
- High DC current gain suitable for low-current signal processing tasks
- Lead-free, halogen-free, and BFR-free construction compliant with RoHS directives
Applications
- General-purpose switching circuits
- Audio frequency (AF) amplifier stages
- Low-power logic interface buffers
Procurement Notes
Verify the specific ordering suffix 'LT3G' to confirm the tape and reel packaging quantity and ensure compatibility with automated pick-and-place assembly equipment. Confirm that the 'C' suffix designation matches the required hFE binning specifications for the target circuit design before finalizing procurement orders.
Selection Notes
Select this component when a high-gain PNP transistor is required in a compact SOT-23 footprint. The BC857C variant provides superior current amplification compared to A or B grades, making it ideal for driving loads with minimal base drive current while maintaining low saturation voltages for efficient power management.
Part Context
This part belongs to the BC856ALT1G series, which includes complementary NPN devices and variants with different voltage ratings such as the BC856 (-65 V) and BC858 (-30 V). All members share the same physical package and thermal characteristics but differ in breakdown voltage thresholds and current gain classifications.
Replacement Considerations
Direct pin-compatible substitutes within the same series include BC857ALT1G and BC857BLT1G. Verify that alternative manufacturers offer components with matching hFE ranges and identical SOT-23 pinout configurations to ensure seamless integration without circuit redesign.
FAQ
What is the maximum collector-emitter voltage for the BC857CLT3G?
The maximum collector-emitter voltage (VCEO) is -45 V.
How is the BC857CLT3G packaged?
It is supplied in an SOT-23 (TO-236) surface-mount package with three pins.
What is the typical DC current gain range for this device?
The DC current gain (hFE) ranges from a minimum of 420 to a maximum of 800 when tested at IC = -2.0 mA and VCE = -5.0 V.
