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The BC857CW,115 is a single PNP bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package with three terminals. The device supports a maximum continuous collector current of 100 mA and offers a collector-emitter breakdown voltage of 45 V. Key electrical characteristics include a transition frequency of 100 MHz, power dissipation of 200 mW, and a DC current gain ranging from 125 to 420 at specified test conditions. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix 'CW' against official Nexperia documentation to confirm the exact hFE binning and packaging type. Ensure the ordering quantity aligns with manufacturer reel specifications. Confirm RoHS compliance status directly with the supplier or through the latest datasheet revision notes prior to final procurement decisions.
Select this component when a compact PNP transistor with moderate current handling and high gain is required. Compare the 45 V collector-emitter voltage rating against circuit supply levels. Evaluate the 100 mA current limit against load requirements. Consider the SOT-323 thermal characteristics for heat dissipation needs in enclosed designs.
This part belongs to the Nexperia BC857 series of small-signal PNP transistors. The series provides various gain bins and packaging options to suit different design constraints. The BC857CW variant specifically targets applications requiring standardized performance within the SC-70 form factor, widely used in consumer electronics and portable devices.
BC857AW,115
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, it is designed for surface mounting in an SOT-323 package.
The transition frequency (fT) is 100 MHz.