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The BC857CWE6327BTSA1 is a PNP general-purpose bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. The device features a high DC current gain (hFE) ranging from 420 to 800, ensuring efficient signal amplification. Its transition frequency reaches 250 MHz, supporting moderate-speed switching applications. Packaged in the SOT-23-3 surface-mount format, it dissipates up to 330 mW of power. The component is qualified under AEC-Q100 standards for automotive reliability.
Verify the specific suffix WE6327BTSA1 against official Infineon documentation to confirm packaging details and exact manufacturing lot specifications. Ensure compatibility with existing PCB footprints for the SOT-23-3 package. Confirm RoHS compliance status through the latest material content sheet provided by the manufacturer before finalizing procurement orders.
Select this component when a PNP transistor with high current gain and automotive reliability is required. The SOT-23-3 package offers space efficiency for compact designs. Consider the 45 V collector-emitter voltage rating to ensure adequate headroom for the target circuit application. Verify thermal management requirements against the 330 mW power dissipation limit.
This part belongs to the BC857 series of general-purpose transistors from Infineon Technologies. The series includes various gain grades to accommodate different circuit sensitivity requirements. These components are widely used in consumer electronics and automotive systems where reliable PNP switching is necessary.
Consult official Infineon substitution guides for verified equivalents. Generic replacements may not match the specific hFE range or AEC-Q100 automotive qualification.