BC857CWE6433HTMA1

BC857CWE6433HTMA1

  • Description:TRANS PNP 45V 0.1A PG-SOT323
  • Series:-

SKU:bb174bae4a9e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.1A PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

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BC857CWE6433HTMA1

Overview

The BC857CWE6433HTMA1 is a PNP silicon general-purpose transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current of 100 mA with a peak collector current capability of 200 mA. Power dissipation is rated at 330 mW. The transition frequency (fT) is specified at 250 MHz, ensuring adequate performance for high-speed switching applications. The component operates within a temperature range of -65 °C to +150 °C and is housed in a surface-mount SOT-23-3 package.

Feature Summary

  • PNP bipolar junction transistor configuration optimized for general-purpose switching
  • High transition frequency supporting fast signal processing and switching speeds
  • Robust thermal stability allowing operation up to 150 °C junction temperature
  • Compact surface-mount packaging facilitating automated assembly

Applications

  • General-purpose signal switching circuits
  • Low-power amplifier stages
  • Logic level translation interfaces
  • Battery-powered portable devices

Procurement Notes

Verify the specific suffix WE6433HTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and binning grades. Ensure compatibility with RoHS directives and check for any end-of-life notices or alternative part recommendations directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a PNP transistor with moderate current handling and high-speed switching characteristics is required. The SOT-23-3 package suits space-constrained designs. Compare fT and hFE ranges against circuit requirements to ensure sufficient gain and bandwidth for the intended application frequency.

Part Context

This part belongs to the BC857 series of PNP transistors designed for low-voltage, low-power applications. It serves as a complementary counterpart to NPN variants like the BC847, commonly used in differential pairs and push-pull configurations within consumer electronics and industrial control systems.

Replacement Considerations

BC857B

FAQ

What is the maximum collector current rating?

The maximum continuous collector current is 100 mA, with a peak pulse current capability of 200 mA.

Is this component AEC-Q100 qualified?

Public datasheets for the standard BC857C do not explicitly list AEC-Q100 automotive qualification; verify specific lot markings or dedicated automotive variants if automotive compliance is required.

BC857CWE6433HTMA1BC857CWE6433HTMA1

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