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The BC857CWE6433HTMA1 is a PNP silicon general-purpose transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current of 100 mA with a peak collector current capability of 200 mA. Power dissipation is rated at 330 mW. The transition frequency (fT) is specified at 250 MHz, ensuring adequate performance for high-speed switching applications. The component operates within a temperature range of -65 °C to +150 °C and is housed in a surface-mount SOT-23-3 package.
Verify the specific suffix WE6433HTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications and binning grades. Ensure compatibility with RoHS directives and check for any end-of-life notices or alternative part recommendations directly from the manufacturer before finalizing procurement plans.
Select this component when a PNP transistor with moderate current handling and high-speed switching characteristics is required. The SOT-23-3 package suits space-constrained designs. Compare fT and hFE ranges against circuit requirements to ensure sufficient gain and bandwidth for the intended application frequency.
This part belongs to the BC857 series of PNP transistors designed for low-voltage, low-power applications. It serves as a complementary counterpart to NPN variants like the BC847, commonly used in differential pairs and push-pull configurations within consumer electronics and industrial control systems.
BC857B
The maximum continuous collector current is 100 mA, with a peak pulse current capability of 200 mA.
Public datasheets for the standard BC857C do not explicitly list AEC-Q100 automotive qualification; verify specific lot markings or dedicated automotive variants if automotive compliance is required.