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The BC857CWQ-13 is a PNP small signal transistor manufactured by Diodes Incorporated in an SOT323 package. It features a collector-emitter voltage (VCEO) of -45 V, a collector-base voltage (VCBO) of -50 V, and a continuous collector current (IC) of -100 mA. The device has a power dissipation rating of 200 mW and operates within a temperature range of -65°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 420 to 800 at IC = -2mA, and a transition frequency (fT) of 100 MHz to 200 MHz at IC = -10mA.
Verify the specific ordering suffix '-13' corresponds to the 10000 units per reel configuration when sourcing this component. Confirm that the K3G marking code matches the required product type identification for your assembly process. Ensure compliance with IATF16949 manufacturing standards if the application demands strict automotive change control protocols.
Select this component for designs requiring high reliability in automotive environments due to its AEC-Q101 qualification. Consider the SOT323 package dimensions for space-constrained PCB layouts. Verify that the hFE range of 420 to 800 meets the biasing requirements of the target circuit. Ensure thermal management supports the 200 mW power dissipation limit under maximum operating conditions.
This part belongs to the BC857CWQ series of PNP transistors designed specifically for automotive use. It serves as the complement to the BC847CWQ NPN transistor. The series is manufactured in IATF16949 certified facilities to meet stringent automotive quality standards. The BC857CWQ-13 variant specifically denotes the tape and reel packaging quantity.
The device offers an ESD HBM rating of 4000 V (JEDEC Class 3A) and a CDM rating of 1000 V (JEDEC Class C3).
Yes, the operating and storage temperature range extends up to +150°C.
The K3G marking is the product type marking code for the BC857CWQ series.