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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC858ALT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current of -100 mA dc. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain ranging from 180 to 520 at specific test conditions, a collector-emitter saturation voltage of -0.65 V max, and a current-gain bandwidth product of 100 MHz.
Feature Summary
- Designed for general-purpose amplifier applications
- AEC-Q101 qualified with PPAP capability for automotive use
- Compliant with RoHS standards and free of lead, halogens, and brominated flame retardants
Applications
- General-purpose amplification circuits
- Automotive electronic systems requiring AEC-Q101 qualification
- Low-power surface-mount switching applications
Procurement Notes
Verify the ordering suffix matches the required gain bin and packaging configuration. Confirm that the 'ALT' designation aligns with the specific site and control change requirements for automotive or high-reliability applications. Ensure the component meets Pb-Free and Halogen-Free specifications as stated in the datasheet. Cross-reference the marking code '3J' with the official onsemi documentation to validate authenticity and part revision.
Selection Notes
Select this component when a PNP transistor with a -30 V collector-emitter breakdown voltage is required. The BC858 variant offers lower voltage tolerance compared to the BC856 (-65 V) and BC857 (-45 V) counterparts within the same series. Consider the specific hFE binning requirements for the intended circuit gain. The SOT-23 package is suitable for space-constrained PCB layouts requiring low power dissipation.
Part Context
This device belongs to the BC856ALT1G series of PNP silicon transistors manufactured by onsemi. The series includes complementary NPN devices such as the BC846ALT1G. The 'ALT' prefix indicates specific manufacturing controls and site requirements, often associated with automotive-grade supply chains. The component is distinct from standard commercial grade parts due to its qualification status.
Replacement Considerations
Compatible substitutes within the same series include BC856ALT1G and BC857ALT1G, provided the voltage ratings meet the circuit requirements. Verify pinout compatibility in the SOT-23 package. Check if the replacement part shares the same AEC-Q101 qualification and PPAP capability if used in automotive applications.
