BC858AMTF

BC858AMTF

  • Description:TRANS PNP 30V 0.1A SOT-23-3
  • Series:-

SKU:bb2e46a64380 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:310 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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BC858AMTF

Overview

The BC858AMTF is a PNP epitaxial silicon transistor housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA. The device provides a DC current gain (hFE) range of 110 to 220, classifying it as 'A' grade. Key electrical characteristics include a collector-base voltage of -30 V, emitter-base voltage of -5 V, and maximum power dissipation of 310 mW at 25°C ambient temperature.

Feature Summary

  • Designed for switching and amplifier applications
  • Suitable for automatic insertion in thick and thin-film circuits
  • Complements the BC846 through BC850 NPN transistor series

Applications

  • General purpose amplification
  • Signal switching circuits
  • Thick and thin-film circuit integration

Procurement Notes

Verify the specific hFE bin classification corresponds to the required application gain range. Confirm that the SOT-23 package dimensions align with the target PCB footprint. Ensure the operating junction temperature limits are respected within the final system design constraints.

Selection Notes

Select this component when a low-voltage PNP switch or amplifier is needed in a compact surface-mount form factor. The A-grade hFE specification ensures predictable gain performance for general-purpose designs. Consider complementary NPN devices from the same family for matched pair requirements.

Part Context

This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by ON Semiconductor following their corporate integration. The family offers various hFE classifications and voltage ratings to suit different general-purpose electronic circuit needs.

Replacement Considerations

Compatible substitutes include BC857AMTF and BC859AMTF, provided the voltage and gain specifications meet the circuit requirements. Verify pinout compatibility and thermal characteristics before implementation.

BC858AMTFBC858AMTF

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