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The BC858AMTF is a PNP epitaxial silicon transistor housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA. The device provides a DC current gain (hFE) range of 110 to 220, classifying it as 'A' grade. Key electrical characteristics include a collector-base voltage of -30 V, emitter-base voltage of -5 V, and maximum power dissipation of 310 mW at 25°C ambient temperature.
Verify the specific hFE bin classification corresponds to the required application gain range. Confirm that the SOT-23 package dimensions align with the target PCB footprint. Ensure the operating junction temperature limits are respected within the final system design constraints.
Select this component when a low-voltage PNP switch or amplifier is needed in a compact surface-mount form factor. The A-grade hFE specification ensures predictable gain performance for general-purpose designs. Consider complementary NPN devices from the same family for matched pair requirements.
This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by ON Semiconductor following their corporate integration. The family offers various hFE classifications and voltage ratings to suit different general-purpose electronic circuit needs.
Compatible substitutes include BC857AMTF and BC859AMTF, provided the voltage and gain specifications meet the circuit requirements. Verify pinout compatibility and thermal characteristics before implementation.