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The BC858AW-HF is a PNP bipolar junction transistor manufactured by Comchip Technology, designed for general-purpose switching and amplification applications. It utilizes silicon technology and is housed in an SOT-323 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of -30 V, a collector-base voltage (VCBO) of -30 V, and an emitter-base voltage (VEBO) of -5 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 200 mW. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'AW' against official Comchip Technology documentation to confirm automotive grade classification and halogen-free status. Ensure the ordering part number matches the exact datasheet revision required for your design. Confirm RoHS compliance details directly from the manufacturer's declaration before finalizing procurement.
Select this component when a PNP transistor with -30 V breakdown voltage and 100 mA current capacity is required in a compact SOT-323 footprint. Consider its automotive qualification if the application demands higher reliability under varying thermal conditions. Compare hFE gain ranges with other BC858 variants if specific amplification characteristics are critical.
This component belongs to the BC858 series of PNP transistors produced by Comchip Technology. It shares the fundamental electrical profile of standard BC858 devices but includes specific manufacturing attributes indicated by the 'AW' suffix, such as automotive reliability standards. It serves as a solid-state switch or amplifier in consumer and industrial electronics.
BC858C-HF
The maximum power dissipation is 200 mW.
Yes, the product description identifies it as an automotive-grade transistor.
The device operates between -65°C and +150°C.