SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Diotec Semiconductor BC858AW is a general-purpose PNP bipolar junction transistor (BJT) housed in an SOT-323 surface-mount package. It features a maximum collector-emitter voltage of -30 V and a continuous collector current rating of -100 mA, with a peak current capacity of 200 mA. The device dissipates up to 200 mW of power at 25°C ambient temperature. It offers three DC current gain (hFE) groups: Group A (125–250), Group B (220–475), and Group C (420–800). Operating temperatures range from -55°C to +150°C.
Verify the specific hFE group suffix (A, B, or C) required for your application when ordering. Confirm whether the standard commercial grade or the automotive-grade (-Q/-AQ) variant is needed. Ensure the SOT-323 footprint matches your PCB layout. Check the latest datasheet version on the manufacturer's website for any updates to mechanical data or marking codes before finalizing designs.
Select the appropriate hFE group based on the required gain stability and linearity of the amplifier or switch. The BC858AW provides a 30 V breakdown, suitable for low-voltage logic interfacing. Consider the complementary NPN BC848W for push-pull configurations. Evaluate thermal resistance requirements if operating near the upper temperature limits or high duty cycles.
This component belongs to the BC856W through BC859CW series of universal PNP transistors manufactured by Diotec Semiconductor. These devices are designed as direct replacements for industry-standard small-signal transistors. The series covers various voltage ratings from 30 V to 65 V, allowing designers to choose the optimal breakdown voltage for their specific power supply constraints while maintaining consistent packaging and pinout compatibility.
BC858BW
The recommended complementary NPN transistors are the BC848W, BC848BW, or BC848BQ/-AQ.
Standard versions are for commercial/industrial use. Automotive-grade variants are available with the -Q (compliant) or -AQ (qualified) suffixes, meeting AEC-Q101 standards.
The typical transition frequency is 100 MHz, measured at VCE = 5 V, IC = 10 mA, and f = 100 MHz.