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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-323
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC858AWHE3-TP is a PNP general-purpose transistor manufactured by MCC in an SOT-323 package. It features a collector-emitter voltage of -45V, a continuous collector current of -100mA, and power dissipation of 150mW. The device has a transition frequency of 100MHz and DC current gain ranging from 220 to 800 depending on the grade. It operates within a junction temperature range of -65°C to +150°C and meets AEC-Q101 automotive standards.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Halogen-free green device compliant with environmental standards
- Moisture sensitivity level 1 for reliable surface mount processing
- Epoxy material rated UL 94 V-0 flammability
Applications
- Automatic insertion circuits
- Switching applications
- Audio frequency (AF) amplifier stages
Procurement Notes
Verify that the ordering suffix 'TP' indicates RoHS compliance as specified in the datasheet. Confirm the specific gain bin (A, B, or C) required for the design, as the part number covers multiple grades. Ensure sourcing from authorized distributors to guarantee traceability and authenticity per manufacturer guidelines.
Selection Notes
Select this component when a compact PNP signal transistor is needed for space-constrained designs. The SOT-323 package offers a small footprint suitable for high-density PCB layouts. Consider the specific hFE bin requirements, as the datasheet groups three distinct gain ranges under the single product family designation.
Part Context
This component belongs to the BC856AWHE3 through BC858CWHE3 series, which are grouped general-purpose transistors sharing identical physical dimensions and maximum ratings. The BC858 variant specifically provides a -45V collector-emitter breakdown voltage, distinguishing it from the -65V BC856 and -80V BC857 counterparts within the same package.
Replacement Considerations
BC858AHE3-TP
FAQ
What marking code identifies the BC858AWHE3-TP?
The marking code for the BC858AWHE3-TP is 3J.
What is the maximum thermal resistance for this device?
The maximum thermal resistance is 833°C/W from junction to ambient.
Does the BC858AWHE3-TP support high-temperature operation?
Yes, the operating junction temperature range extends up to +150°C.
