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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The BC858AWT1 is a PNP silicon general-purpose transistor from the BC856/7/8 series, manufactured by onsemi. It operates in an SC-70 (SOT-323) surface-mount package with a maximum collector-emitter voltage of -30 V and continuous collector current of -100 mA. The device features a DC current gain (hFE) range of 420 to 800 at IC = -2.0 mA and VCE = -5.0 V. Thermal characteristics include a total power dissipation of 150 mW and a junction-to-ambient thermal resistance of 883 °C/W. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Designed for low-power surface mount applications using the compact SC-70/SOT-323 housing.
- Optimized for general-purpose amplifier circuits with high DC current gain specifications.
- Manufactured using lead-free packaging processes compliant with environmental standards.
Applications
- General purpose amplifier applications
- Low power surface mount circuit designs
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix matches the specific device code required for the application. Ensure compliance with RoHS directives if lead-free status is mandatory. Check datasheet revision dates against manufacturing lot codes to validate technical parameters.
Selection Notes
Select this component when a PNP transistor with high gain (420-800 hFE) is required in a small SOT-323 footprint. Verify that the -30 V breakdown voltage meets circuit requirements. Consider the 150 mW power dissipation limit during thermal design. Compare against BC856 or BC857 variants if higher voltage ratings are needed.
Part Context
This part belongs to the BC856BWT1, BC857BWT1, and BC858AWT1 series of preferred devices. These transistors share similar physical packaging but differ in voltage ratings and gain ranges. The BC858 variant specifically targets applications requiring moderate voltage handling with high amplification capabilities in a miniature form factor.
Replacement Considerations
BC858BWT1 offers lower gain (125-475). BC857BWT1 provides -45 V rating. BC856BWT1 supports -65 V rating. All share the SOT-323 package and -100 mA current limit.
