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The BC858B-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter breakdown voltage of -30 V and a continuous collector current rating of -100 mA. The device provides a DC current gain (hFE) range of 220 to 475 at a collector current of -2.0 mA and VCE of -5 V. It operates within a temperature range of -55 °C to +150 °C and has a power dissipation capacity of 310 mW under standard conditions.
Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit reel packaging configuration. Confirm that the 'K3B' marking code matches the required batch identification. Ensure compliance with RoHS 3 and REACH regulations as specified in the manufacturer's documentation before finalizing procurement orders.
Select this component when a PNP transistor with a -30 V collector-emitter voltage rating is required. The BC858B variant offers a specific hFE binning range of 220 to 475, distinguishing it from the A and C variants. Consider the SOT23 package dimensions and thermal characteristics for PCB layout constraints.
This part belongs to the BC856A–BC858C series of PNP small-signal transistors. It serves as the complementary counterpart to the NPN BC848B transistor. The series is designed for general-purpose use in low-power electronic circuits requiring reliable switching and amplification capabilities in compact surface-mount packages.
The datasheet explicitly states that the BC858A-7-F is End-of-Life (EOL) and recommends using the BC857A-7-F as a substitute. No other direct replacements are listed for the BC858B-7-F model in the provided documentation.
The maximum collector-emitter voltage (VCEO) is -30 V.
Yes, the part is qualified to JEDEC standards for high reliability.
The datasheet recommends using the BC857A-7-F as a replacement for the EOL BC858A-7-F.