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The Diotec Semiconductor BC858B-C is a surface-mount general-purpose PNP bipolar junction transistor housed in an SOT-23 package. It features a collector-emitter voltage of -45 V, a collector-base voltage of -50 V, and a continuous collector current of -100 mA with a peak rating of -200 mA. The device dissipates up to 300 mW at 25°C ambient temperature. As the 'C' suffix variant, it belongs to the highest DC current gain group (hFE 420–800). It operates within a junction temperature range of -55°C to +150°C.
Verify that the ordering code includes the '-C' suffix to confirm the specific high-gain commercial grade. Ensure the component matches the standard industrial or commercial reliability requirements rather than automotive AEC-Q101 standards unless explicitly specified otherwise. Confirm the package type corresponds to SOT-23 during physical inspection.
Select this component when a high DC current gain is required for signal amplification or efficient switching control. The BC858B-C offers superior hFE characteristics compared to lower gain variants. Consider the thermal resistance and power dissipation limits relative to the PCB copper pad layout to ensure stable operation under maximum load conditions.
This part belongs to the BC856...BC860 family of universal PNP transistors manufactured by Diotec Semiconductor. The series provides complementary NPN options and various gain grades. The BC858B-C specifically targets applications requiring higher current gain performance within a compact surface-mount footprint suitable for automated assembly processes.
Compatible substitutes include other BC858B variants from different manufacturers such as Nexperia or onsemi, provided they match the SOT-23 package and electrical ratings. Verify that replacement parts meet the same hFE grouping specifications to maintain circuit performance consistency.