BC858BE6327HTSA1

Overview

The BC858BE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and configured as a dual device. Key electrical specifications include a maximum DC collector current of 200 mA, a collector-emitter voltage (VCEO) of 30 V, and a collector-base voltage (VCBO) of 30 V. The emitter-base voltage (VEBO) is rated at 5 V. The component features a power dissipation of 330 mW, a transition frequency (fT) of 250 MHz, and a DC current gain (hFE) ranging from 420 to 800. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• Dual PNP configuration for compact circuit integration
• High DC current gain suitable for amplification applications
• Silicon technology with robust thermal stability

Applications

• General-purpose signal amplification
• Switching circuits
• Audio pre-amplifier stages

Procurement Notes

Verify the specific binning code 'B' against the datasheet to confirm the exact hFE range required for the design. Confirm RoHS compliance status through official Infineon documentation before finalizing procurement. Check for end-of-life notices or obsolescence warnings directly from the manufacturer to ensure long-term supply availability.

Selection Notes

Select this component when a dual PNP transistor in an SOT-23-3 package is required. Ensure the design accounts for the 330 mW power dissipation limit and the 30 V voltage ratings. Verify that the 200 mA collector current capability meets the load requirements. Compare the hFE range with alternative parts if tighter gain control is necessary.

Part Context

This part belongs to the BC858 series of general-purpose PNP transistors. It is designed for low-voltage, low-power applications. The E6327HTSA1 suffix indicates the specific tape-and-reel packaging format used for automated assembly processes.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may not match the specific B-binning gain characteristics or the exact thermal performance of the original component.