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The BC858BHE3-TP is a PNP silicon small-signal bipolar junction transistor manufactured by Micro Commercial Components. It operates in an SOT-23-3 surface-mount package and supports a maximum collector current of 100 mA with a collector-emitter voltage rating of 30 V. The device features a power dissipation capacity of 300 mW, a transition frequency of 100 MHz, and a DC current gain range from 220 to 475 at -2 mA and -5 V. It functions within a temperature range of -55°C to +150°C.
Verify the specific datasheet revision and AEC-Q101 certification status directly with Micro Commercial Components before integration. Confirm that the SOT-23-3 footprint matches your PCB design constraints. Ensure compliance with RoHS directives as indicated in official documentation. Cross-reference pinouts with manufacturer diagrams to prevent installation errors during assembly.
Select this component when a PNP transistor with moderate current handling and high gain is required in a compact surface-mount form factor. The 30 V rating suits low-voltage logic interfaces. Consider thermal management requirements given the 300 mW dissipation limit in small packages. Evaluate the 100 MHz bandwidth against signal frequency needs for amplification tasks.
This part belongs to the BC858B series of PNP transistors produced by MCC. It utilizes standard silicon planar technology optimized for volume manufacturing. The HE3 suffix indicates halogen-free and lead-free compliant packaging. The TP suffix typically denotes tape-and-reel or cut-tape availability for automated placement systems.
Publicly confirmed substitute part numbers are not available in the provided source material.