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The BC858BM3-TP is a PNP silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It operates within a collector current of 100 mA and features a collector-emitter voltage rating of -65 V, a collector-base voltage of -80 V, and an emitter-base voltage of -5 V. The device dissipates up to 265 mW at 25°C ambient temperature. DC current gain ranges from 140 to 300 for the 'B' suffix variant. Transition frequency reaches 100 MHz. Operating junction temperature spans -55°C to +150°C.
Verify that the ordering suffix matches the required gain binning configuration. Confirm the package type aligns with the PCB footprint requirements. Ensure the component meets specific environmental certifications if mandated by the end product design specifications.
Select this component based on the required PNP polarity and maximum voltage ratings. Consider the thermal resistance characteristics for power dissipation limits. Evaluate the DC current gain range against the circuit's amplification or switching requirements.
This part belongs to the BC856/BC857/BC858 series of small-signal transistors. These devices are commonly utilized in low-power consumer electronics and industrial control modules. The SOT-723 package provides a compact form factor suitable for space-constrained surface mount designs.
Cross-reference with other manufacturers offering identical pinouts and electrical parameters. Verify compatibility regarding thermal performance and packaging dimensions before implementation.