BC858BWH6327XTSA1

Overview

The BC858BWH6327XTSA1 is a dual PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device supports a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 330 mW with a saturation voltage of 250 mV. The gain-bandwidth product (fT) is 250 MHz. Current gain ranges from a minimum of 200 to a maximum of 450. Operating temperatures span from -65°C to +150°C.

Feature Summary

• Dual PNP configuration within a compact SOT-323-3 surface-mount package for space-efficient circuit layouts.
• High current gain capability ranging from 200 to 450 for effective signal amplification.
• Wide operating temperature range extending up to +150°C for reliable performance in varied thermal environments.

Applications

• General-purpose switching applications
• Signal amplification circuits
• Low-power control logic interfaces

Procurement Notes

Verify the specific suffix WH6327XTSA1 against official Infineon documentation to confirm exact binning and packaging specifications. Confirm component availability status as distribution channels may list obsolete or end-of-life items. Ensure compatibility with RoHS directives if required by the target application. Cross-reference datasheet parameters with actual design requirements before finalizing procurement decisions.

Selection Notes

Select this component when a dual PNP transistor is required in a small SOT-323-3 footprint. Consider the 30 V voltage rating and 200 mA peak current limits for appropriate load handling. Evaluate the hFE range of 200-450 against amplifier gain requirements. Verify that the 330 mW power dissipation rating suits the thermal management strategy of the host system.

Part Context

This part belongs to the BC858 series of PNP transistors produced by Infineon Technologies. It shares the core electrical characteristics of the BC858 family but is distinguished by its specific dual configuration and SOT-323-3 packaging. The suffix indicates specific manufacturing and packaging details defined by Infineon.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon replacement guides or equivalent manufacturer datasheets for compatible alternatives.