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The BC858C-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter breakdown voltage of -30 V and a continuous collector current rating of -100 mA. The device offers a DC current gain (hFE) ranging from 420 to 800 at -2 mA and -5 V. Electrical characteristics include a transition frequency of 200 MHz and a power dissipation capacity of 310 mW. Operating temperatures range from -55°C to +150°C.
Verify the specific part number against official manufacturer documentation to ensure accuracy. Confirm that the component meets all required environmental compliance standards, including RoHS and REACH directives. Check for any specific automotive or industrial qualification requirements if applicable to your design. Ensure the ordering suffix matches the desired packaging configuration.
Select this component when a PNP transistor with a -30 V collector-emitter voltage rating is required. The high DC current gain makes it suitable for applications demanding significant signal amplification. Consider the SOT23 package size for space-constrained designs. Verify thermal management needs based on the specified power dissipation limits under your operating conditions.
This component belongs to the BC856A through BC858C series of PNP small-signal transistors. The 'C' suffix indicates a specific binning for higher DC current gain compared to 'A' or 'B' variants. These devices are complementary to the BC846A-BC848C NPN transistor series, allowing for matched pairs in differential or push-pull configurations.
The datasheet notes that the BC858A-7-F is End-of-Life and recommends using the BC857A-7-F as a substitute. No other direct replacements are explicitly listed for the BC858C-7-F model in the provided documentation.
The maximum collector-emitter breakdown voltage (BVCEO) is -30 V.
Yes, the device is totally lead-free and fully RoHS compliant, as well as being halogen and antimony-free.
The DC current gain (hFE) ranges from a minimum of 420 to a maximum of 800, tested at IC = -2.0mA and VCE = -5V.