BC858C

BC858C

$0.03
  • Description:TRANS PNP 30V 0.1A SOT-23
  • Series:-

SKU:bec6ae090740 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A SOT-23
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

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BC858C

Overview

The BC858C is a PNP silicon epitaxial planar transistor manufactured by Taiwan Semiconductor Corporation, housed in an SOT-23-3 surface-mount package. It supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 30 V, with a collector-base voltage (VCBO) of 30 V and an emitter-base voltage (VEBO) of 5 V. The device exhibits a collector-emitter saturation voltage of 650 mV and a power dissipation rating of 250 mW. Its minimum DC current gain (hFE) is specified at 420.

Feature Summary

  • Utilizes silicon epitaxial planar technology for robust switching and amplification performance.
  • Provides high DC current gain suitable for general-purpose signal processing applications.
  • Designed for low-voltage operation within standard surface-mount form factors.

Applications

  • General-purpose switching circuits
  • Low-voltage amplifier stages
  • Signal conditioning networks

Procurement Notes

Verify the specific manufacturer designation and RoHS compliance status directly with Taiwan Semiconductor Corporation or authorized distributors before procurement. Confirm that the component meets all required electrical parameters for your specific application environment. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.

Selection Notes

Select this component when a PNP transistor with a 30 V collector-emitter voltage rating and 100 mA continuous current capability is required. The SOT-23-3 package facilitates automated surface-mount assembly. Consider the minimum hFE of 420 for biasing calculations in amplifier designs. Verify thermal management requirements against the 250 mW power dissipation limit under expected operating conditions.

Part Context

This component belongs to the BC858 series of small-signal PNP transistors. It serves as a complementary counterpart to NPN devices like the BC848, often used in push-pull configurations. The 'C' suffix typically denotes a specific binning range for current gain characteristics, ensuring consistent performance across production batches for precision analog and digital switching tasks.

Replacement Considerations

Cross-reference with other manufacturers offering the BC858C part number, such as onsemi or Diotec Semiconductor, to ensure pinout compatibility and equivalent electrical specifications. Verify that alternative sources provide the same SOT-23-3 package and meet the required 30 V and 100 mA ratings.

BC858CBC858C
$0.03
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