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The BC858C is a PNP silicon epitaxial planar transistor manufactured by Taiwan Semiconductor Corporation, housed in an SOT-23-3 surface-mount package. It supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 30 V, with a collector-base voltage (VCBO) of 30 V and an emitter-base voltage (VEBO) of 5 V. The device exhibits a collector-emitter saturation voltage of 650 mV and a power dissipation rating of 250 mW. Its minimum DC current gain (hFE) is specified at 420.
Verify the specific manufacturer designation and RoHS compliance status directly with Taiwan Semiconductor Corporation or authorized distributors before procurement. Confirm that the component meets all required electrical parameters for your specific application environment. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.
Select this component when a PNP transistor with a 30 V collector-emitter voltage rating and 100 mA continuous current capability is required. The SOT-23-3 package facilitates automated surface-mount assembly. Consider the minimum hFE of 420 for biasing calculations in amplifier designs. Verify thermal management requirements against the 250 mW power dissipation limit under expected operating conditions.
This component belongs to the BC858 series of small-signal PNP transistors. It serves as a complementary counterpart to NPN devices like the BC848, often used in push-pull configurations. The 'C' suffix typically denotes a specific binning range for current gain characteristics, ensuring consistent performance across production batches for precision analog and digital switching tasks.
Cross-reference with other manufacturers offering the BC858C part number, such as onsemi or Diotec Semiconductor, to ensure pinout compatibility and equivalent electrical specifications. Verify that alternative sources provide the same SOT-23-3 package and meet the required 30 V and 100 mA ratings.