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The BC858CE6433HTMA1 is a PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a high DC current gain ranging from 420 to 800 at specified test conditions. Power dissipation is rated at 330 mW, with a transition frequency of 250 MHz. Operating temperatures span from -65°C to +150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm pinout and electrical characteristics. Confirm availability status as manufacturing transitions may affect supply continuity. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.
Select this component when high current gain is required in a compact surface-mount form factor. Consider the 30 V voltage rating and 100 mA current limit for circuit design constraints. Evaluate thermal performance based on the 330 mW power dissipation rating within the intended enclosure environment.
This part belongs to the BC858 series of PNP transistors designed for general-purpose use. It shares common family characteristics such as the SOT-23-3 package and basic voltage ratings with other variants in the lineup, differentiated primarily by binning categories for current gain and specific ordering suffixes.
Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains identical pin configuration and meets or exceeds the original voltage, current, and gain specifications.