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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC858CLT3 is a PNP general-purpose bipolar junction transistor manufactured by onsemi. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of -30 V. The device is housed in an SOT-23 surface-mount package with dimensions of 2.9 x 1.3 x 0.93 mm. It has a maximum power dissipation of 310 mW and a maximum operating temperature of +150 °C. The component includes one element per chip and operates at a maximum frequency of 150 MHz.
Feature Summary
- PNP polarity configuration for signal amplification
- SOT-23 surface-mount packaging for compact integration
- High thermal stability up to 150 °C
Applications
- General purpose amplifier circuits
- Switching applications requiring low current control
- Signal processing stages in consumer electronics
Procurement Notes
Verify the specific suffix 'LT3' against the official onsemi datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure the part number matches the exact electrical characteristics required, as variations may exist across different manufacturers or sub-types. Cross-reference the manufacturer's latest documentation for any updates to pin configurations or absolute maximum ratings prior to final procurement.
Selection Notes
Select this component when a PNP transistor with a 30 V collector-emitter voltage and 100 mA continuous current capability is required. The SOT-23 package is suitable for space-constrained designs. Consider the 310 mW power dissipation limit and the 150 MHz transition frequency for high-speed switching or linear amplification needs within these specified limits.
Part Context
This component belongs to the BC858 series of PNP transistors from onsemi. It is designed for general-purpose amplification and switching tasks. The series typically complements NPN counterparts like the BC848 family, providing matched performance characteristics for differential pairs or push-pull configurations in standard electronic circuits.
Replacement Considerations
BC858B
FAQ
What is the maximum collector-emitter voltage for the BC858CLT3?
The maximum collector-emitter voltage (Vceo) is -30 V.
Does the BC858CLT3 support surface mount installation?
Yes, it is available in an SOT-23 surface-mount package.
What is the maximum power dissipation of this transistor?
The maximum power dissipation is 310 mW.
