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The BC858CW-G is a single PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SMD/SMT SOT-323-3 package. Key electrical specifications include a maximum DC collector current of 100 mA, a collector-emitter breakdown voltage (VCEO) of 30 V, and a collector-base voltage (VCBO) of 30 V. The device features an emitter-base voltage (VEBO) rating of 5 V and a power dissipation capacity of 150 mW. It offers a transition frequency (fT) of 100 MHz and a DC current gain (hFE) ranging from 420 to 800. The component operates within a temperature range of -65°C to +150°C.
Verify the manufacturer part number BC858CW-G against official Comchip Technology documentation to confirm authenticity. Ensure the ordering suffix matches the required packaging format, such as reel or cut tape, as specified in the datasheet. Confirm RoHS compliance status through the provided detailed documentation before finalizing procurement decisions.
Select this component when a PNP transistor with a 30 V collector-emitter voltage rating and 100 mA continuous current capability is required. The high hFE range makes it suitable for low-drive applications. Verify that the SOT-323-3 footprint aligns with the PCB layout constraints and that the thermal management strategy supports the 150 mW power dissipation limit.
This component belongs to the BC858 series of small-signal transistors produced by Comchip Technology. It is categorized under bipolar junction transistors (BJTs) designed for general electronic applications. The series is known for providing reliable performance in compact surface-mount configurations, serving as a standard discrete semiconductor solution for various consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the verified source material.