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The BC858CW-HF is a silicon PNP bipolar junction transistor manufactured by Comchip Technology. It is housed in an SOT-23-3 surface-mount package and designed for general-purpose switching and amplification applications. The device features a maximum collector-emitter voltage of 30 V, a maximum collector-base voltage of 30 V, and an emitter-base voltage rating of 5 V. It supports a continuous collector current of 100 mA with a power dissipation capacity of 250 mW. The component operates within a temperature range of -65°C to +150°C and offers a DC current gain (hFE) ranging from 420 to 800, along with a transition frequency of 100 MHz.
Verify the specific suffix 'C' against official manufacturer documentation to confirm the exact hFE binning requirements for your design. Ensure that the ordering information matches the precise electrical characteristics defined in the datasheet. Confirm RoHS compliance status directly with the supplier or through certified product databases before finalizing procurement decisions.
Select this component when a PNP transistor with moderate voltage ratings and high current gain is required in a small form factor. Compare the 420-800 hFE range against circuit requirements to ensure adequate amplification without excessive base drive current. Consider the 250 mW power dissipation limit and thermal management needs for the intended operating environment.
This part belongs to the BC858 series of PNP transistors produced by Comchip Technology. The series includes variants such as BC858A, BC858B, and BC858C, distinguished primarily by their DC current gain ranges. The BC858CW-HF specifically denotes the C-bin gain variant packaged in SOT-23-3 with halogen-free construction, aligning with standard industry preferences for compact, reliable discrete semiconductors.
Compatible substitutes include BC858C from other manufacturers such as Diodes Inc., Nexperia, or ON Semiconductor, provided they offer identical pinouts and matching electrical parameters.