BC858CWE6327BTSA1

Overview

The BC858CWE6327BTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323 surface-mount package with three terminals. The device supports a maximum continuous collector current of 100 mA and a peak collector current of 200 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. The component features a DC current gain (hFE) range of 420 to 800 and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 330 mW, with an operating temperature range from -65 °C to +150 °C.

Feature Summary

• High DC current gain ranging from 420 to 800 for effective signal amplification
• Wide operating temperature range extending up to 150 °C for thermal stability
• Compact SOT-323 surface-mount package suitable for space-constrained designs

Applications

• General-purpose switching applications
• Small-signal amplification circuits
• Driver stages for logic interfaces

Procurement Notes

Verify the specific suffix 'WE' against official Infineon documentation to confirm pinout configuration and electrical tolerances. Ensure the ordering code matches the required hFE binning class. Confirm RoHS compliance status through the manufacturer's material content declaration. Cross-reference the datasheet revision date to ensure alignment with current design specifications.

Selection Notes

Select this component when a high-gain PNP transistor is required in a compact SOT-323 footprint. The 420-800 hFE range distinguishes it from lower-gain variants like the BC858B. Verify that the 30 V voltage rating meets circuit requirements. Consider the 330 mW power dissipation limit for thermal management in dense PCB layouts.

Part Context

This part belongs to the BC858 series of general-purpose PNP transistors. It shares the same physical package and basic voltage/current limits as other BC858 variants but differs in current gain classification. The 'C' designation typically indicates the highest gain bin within the family. It serves as a standard discrete semiconductor solution for low-power analog and digital switching tasks.

Replacement Considerations

Direct substitutes include BC858CE6327HTSA1 and BC858CW. Verify pin compatibility and hFE ranges before substitution.