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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A PG-SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
- Grade：-
- Qualification：-
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Overview
The BC858CWH6327XTSA1 is a dual PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a maximum DC collector current of 200 mA and a continuous collector current of 100 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -65 °C to +150 °C, with a power dissipation rating of 330 mW.
Feature Summary
- Dual PNP configuration for compact circuit integration
- High gain bandwith product for signal processing
- Wide operating temperature range for reliability
Applications
- General purpose switching applications
- Amplifier circuits
- Signal conditioning modules
Procurement Notes
Verify the specific suffix WH6327XTSA1 against official Infineon documentation to confirm exact binning and packaging specifications. Confirm availability status as distribution channels may list obsolete or limited stock items. Ensure compliance with RoHS directives and material content declarations prior to procurement.
Selection Notes
Select this component when a dual PNP transistor in a small SOT-323-3 package is required. Compare hFE ranges against similar models like BC858B if specific gain thresholds are critical. Verify thermal management requirements given the 330 mW power dissipation limit in the specified package.
Part Context
This part belongs to the BC858 series of general-purpose PNP transistors from Infineon. It shares electrical characteristics with other variants in the family but differs in gain binning and packaging details. The series is designed for low-power switching and amplification tasks in consumer and industrial electronics.
Replacement Considerations
Check for direct pin-compatible substitutes such as BC858B or BC858D from Infineon or other manufacturers. Ensure replacement parts match the SOT-323-3 footprint and meet the same voltage and current ratings.
