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The BC859B-AQ is a PNP general-purpose small signal bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes an SOT-23 (TO-236) surface-mount package and operates with a maximum collector current of 100 mA. The device features a collector-emitter breakdown voltage of 30 V and a power dissipation rating of 250 mW at 25°C ambient temperature. It belongs to the Group B current gain category, offering a DC current gain range from 150 to 475 at an IC of 2 mA. The component is AEC-Q101 qualified for automotive applications and supports a junction temperature up to 150°C.
Verify that the ordering suffix explicitly includes -AQ to confirm AEC-Q101 qualification status. Confirm the specific gain group (Group B) matches design requirements. Ensure the SOT-23 footprint aligns with the PCB layout. Check for RoHS compliance documentation if required by local regulations.
Select this component when automotive-grade reliability is required for PNP switching or amplification. The Group B gain specification suits moderate amplification needs. Compare thermal resistance values against the commercial grade (-C) variant if operating in high-power environments. Verify complementary NPN availability within the same series for push-pull configurations.
This part belongs to the BC856...BC860 family of SMD general-purpose PNP transistors. It serves as the PNP counterpart to the BC847B NPN transistor. The -AQ suffix distinguishes it from standard industrial grades by meeting automotive quality standards. It shares mechanical dimensions with other devices in the TO-236 package family.
BC859B
The -AQ suffix indicates that the component is AEC-Q101 qualified, meeting specific automotive reliability standards.
As a Group B device, the BC859B-AQ has a DC current gain (hFE) ranging from 150 to 475 at an IC of 2 mA.
Yes, the datasheet confirms the product is compliant with RoHS directives without exemptions.