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The BC859B-QR is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector current of 100 mA and withstands a collector-emitter voltage of 45 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 6 V, and a power dissipation rating of 250 mW. It features a transition frequency of 100 MHz and operates within a temperature range of -65°C to +150°C. The component holds AEC-Q101 qualification for automotive reliability.
Verify the specific suffix 'QR' indicates the reel packaging format and confirms AEC-Q101 automotive qualification status against the official Nexperia datasheet. Ensure the ordering part number matches the exact voltage grade and gain bin required for the design. Confirm RoHS compliance documentation is available from the authorized distributor prior to final procurement decisions.
Select this component when a PNP transistor with 45V collector-emitter capability is required in a compact SOT-23 package. The AEC-Q101 qualification makes it suitable for automotive environments where higher reliability standards apply compared to standard commercial grades. Consider the 100mA current limit and 250mW power dissipation constraints during thermal management planning for the target application circuit.
This component belongs to the Nexperia BC8xx series of small-signal transistors. It serves as the PNP complement to the NPN BC849B-QR. The series is designed for low-current, low-voltage applications requiring high gain and reliable performance in space-constrained printed circuit board layouts.
BC859B,215
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, the BC859B-QR is AEC-Q101 qualified.
The transition frequency is 100 MHz.