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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC859BLT1G is a PNP silicon general-purpose transistor from the BC856ALT1G series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter breakdown voltage of -30 V and a continuous collector current rating of -100 mA. The device offers a minimum DC current gain of 220 at specified test conditions and includes low noise characteristics suitable for signal amplification.
Feature Summary
- PNP silicon construction designed for general-purpose amplifier applications
- Low noise performance optimized for small-signal processing
- Surface-mount SOT-23 packaging for automated assembly
Applications
- General purpose amplifier circuits
- Small-signal switching applications
- Low noise audio pre-amplification stages
Procurement Notes
Verify the specific ordering suffix 'BLT1G' against the manufacturer's official documentation to confirm the exact binning grade and tape-and-reel quantity. Ensure the component meets RoHS compliance requirements for your manufacturing process. Confirm that the SOT-23 pinout matches your PCB footprint design before finalizing procurement orders.
Selection Notes
Select this component when a PNP transistor with a -30 V collector-emitter voltage rating is required. The BC859B variant provides a higher minimum DC current gain compared to lower binning options within the same series. Consider the thermal resistance limits and power dissipation capabilities relative to the expected operating temperature range of the target application.
Part Context
This part belongs to the BC856ALT1G series of general-purpose PNP transistors manufactured by onsemi. The series includes multiple variants differentiated by current gain binning codes. These devices are widely used in consumer electronics and industrial control systems requiring reliable small-signal amplification or switching functions in compact surface-mount designs.
Replacement Considerations
BC859BLT3G
FAQ
What is the maximum collector-emitter voltage for the BC859BLT1G?
The maximum collector-emitter voltage (VCEO) is -30 V.
What is the minimum DC current gain for this specific variant?
The BC859B variant has a minimum DC current gain (hFE) of 220 at IC = -2.0 mA and VCE = -5.0 V.
Is this device qualified for automotive applications?
Only devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable. Standard parts without these prefixes are not explicitly stated as automotive qualified in the provided datasheet.
