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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC859BMTF is a PNP general-purpose bipolar junction transistor manufactured by onsemi. It is housed in the SOT-323 surface-mount package, designed for compact circuit layouts. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. It operates within a temperature range from -55°C to +150°C. The component provides a DC current gain (hFE) classification of 'B', ensuring specific amplification characteristics suitable for switching and amplification tasks.
Feature Summary
- PNP general-purpose transistor configuration
- SOT-323 surface-mount packaging
- High collector-emitter voltage capability
- Wide operating temperature range
Applications
- General purpose amplification
- Switching applications
- Signal processing circuits
Procurement Notes
Verify the manufacturer marking and date code against official onsemi documentation to ensure authenticity. Confirm the SOT-323 package dimensions and pinout alignment with design specifications. Check for RoHS compliance status as indicated in the latest datasheet revision. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues prior to assembly.
Selection Notes
Select this component when a PNP transistor with 45 V breakdown voltage and 100 mA continuous current capacity is required in a small footprint. The 'B' gain bin offers defined hFE ranges for predictable amplifier performance. Consider thermal management requirements given the 225 mW power dissipation limit in the SOT-323 package. Verify compatibility with existing PCB land patterns for SOT-323 components.
Part Context
This part belongs to the BC859 series of PNP transistors from onsemi, which are widely used in consumer electronics and industrial control systems. The series includes variants with different gain bins and voltage ratings. The BC859BMTF specifically denotes the B-gain variant in tape-and-reel packaging, optimized for automated surface-mount assembly processes in high-volume manufacturing environments.
Replacement Considerations
Compatible substitutes include the BC859BWT1G from onsemi and the BC859B from Nexperia, provided they match the SOT-323 package and electrical specifications. Verify that alternative parts offer equivalent hFE 'B' binning and identical pin configurations to ensure direct interchangeability without circuit redesign.
FAQ
What is the DC current gain classification for the BC859BMTF?
The BC859BMTF features an 'B' gain classification, indicating a specific range of DC current gain (hFE) values defined by the manufacturer for consistent amplification performance.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) rating for the BC859BMTF is 45 V, allowing it to handle higher voltage swings compared to lower-rated variants in the same series.
In which package is the BC859BMTF supplied?
The BC859BMTF is supplied in the SOT-323 surface-mount package, which is a small outline transistor case suitable for space-constrained printed circuit board designs.
