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The BC859BMTF is a single NPN bipolar junction transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device has a transition frequency of 300 MHz and a power dissipation capacity of 310 mW. Key electrical limits include a collector-base voltage of 50 V and an emitter-base voltage of 5 V. The component operates at temperatures up to +150°C.
Verify the specific suffix BMTF against official onsemi documentation to confirm binning or gain classification. Confirm RoHS compliance status through the manufacturer's latest datasheet. Check for end-of-life notices or alternative recommendations if sourcing from secondary markets. Ensure the supplier provides valid traceability documents for quality assurance purposes.
Select this component when a small-signal NPN transistor with moderate voltage ratings is required. The 45 V breakdown voltage suits low-voltage logic interfacing. The 100 mA current limit defines its suitability for driving small loads. Consider thermal management requirements given the 310 mW power dissipation limit in the SOT-23 package.
This part belongs to the BC850 series of small-signal transistors. The series includes variants with different gain ranges and voltage ratings. The BC859BMTF specifically denotes an NPN type within this family. It shares the same physical package as other members like the BC846 or BC857, facilitating design flexibility.
BC859BMTF may be functionally replaced by BC847BMTF or BC848BMTF if voltage ratings align with application needs. Verify pinout compatibility and gain specifications before substitution. Consult onsemi documentation for direct cross-reference lists.